Power MOSFET

VDS (V) 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvement

文件：1.54602 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VDS (V) 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvement

文件：1.54602 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

Vishay

威世

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninter

文件：166.09 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 45 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • Very low Qg and Qoss reduce power loss and improve efficiency • Flexible leads provide resilience to mechanical stress • 100 Rg and UIS tested • Qgd/Qgs ratio

文件：239.07 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 45 V (D-S) MOSFET

FEATURES • TrenchFET® Gen IV power MOSFET • 45 V Drain-source break-down voltage • Tuned for low Qg and Qoss • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • High power densit

文件：232.03 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司