AOW10T60P

600V,10AN-ChannelMOSFET

AOW10T60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

AOWF10T60P

600V,10AN-ChannelMOSFET

C10T60F

SQUARE-PAK,DualDiodes,UltraFastRecovery,LowForwardVoltageDrop

*SQUARE-PAKTO263ABCase(SMD) Packagedin24mmTapeandReel *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

G10T60

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

Features: VerylowVCE(sat)1.5V(typ.) MaximumJunctionTemperature175°C Shortcircuitwithstandtime5s Designedfor: -VariableSpeedDriveforwashingmachinesandairconditioners -inductioncooking -UninterruptedPowerSupply TRENCHSTOP™andFieldstoptechnologyfor60

K10T60

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime–5µs •Designedfor: -VariableSpeedDriveforwashingmachines,airco

RBR10T60ANZ

SchottkyBarrierDiode

SF10T60

10AmpSuperFastRecoveryRectifier

SF10T60-C

10AmpSuperFastRecoveryRectifier

SF10T60F

10AmpSuperFastRecoveryRectifier