TPCF8201

FieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=38mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=5.4S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) •Enhancement-mode:Vth=0.5to1.2V(VDS=10V,ID=200μA)

TPCP8201

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

TPCP8201

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8201

PortableEquipmentApplications

PortableEquipmentApplications MotorDriveApplications DC-DCConverterApplications •Lead(Pb)-Free •Lowdrain-sourceONresistance:RDS(ON)=38mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=7.0S(typ.) •Lowleakagecurrent:IDSS=10μA(VDS=30V) •Enhancementmode:Vth=

TPCS8201

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOS)

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs Smallfootprintduetosmallandthinpackage Lowdrain-sourceONresistance:RDS(ON)=22mΩ(typ.) Highforwardtransferadmittance:|Yfs|=13S(typ.) Lowleakagecurrent:IDSS=10µA(max)(VDS=20V) Enha

VSC8201

LANDISCRETETRANSFORMERMODULES

LANFILTEREDCONNECTORS LANGIGABITICCROSSREFERENCE LAN10/100BASE-TXICCROSSREFERENCE LAN10BASE-TICCROSSREFERENCE

VSC8201

SinglePort10/100/1000BASE-Tand1000BASE-XPHY

Introduction ThispurposeofthisapplicationnoteinconjunctionwiththeVSC8201DatasheetistoprovideinformationtoassistinthedesignandlayoutoftheVSC8201GigabitEthernetTransceiver. PowerSupplyOrganizationandDecoupling TheVSC8201requiresa3.3vanda1.5vpowersu

VSC8201DL

SinglePort10/100/1000BASE-Tand1000BASE-XPHY

Introduction ThispurposeofthisapplicationnoteinconjunctionwiththeVSC8201DatasheetistoprovideinformationtoassistinthedesignandlayoutoftheVSC8201GigabitEthernetTransceiver. PowerSupplyOrganizationandDecoupling TheVSC8201requiresa3.3vanda1.5vpowersu