首页 >SI4410DYTRPBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SI4410DYTRPBF | N-Channel MOSFET Description This N-channel HEXFET® Power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO- 文件:124.61 Kbytes 页数:8 Pages | IRF | IRF | |
SI4410DYTRPBF | N-Channel 20V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch 文件:1.0067 Mbytes 页数:9 Pages | VBSEMI 微碧半导体 | VBSEMI | |
Automotive N-Channel 30 V (D-S) 175 °C MOSFET 文件:258.14 Kbytes 页数:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Automotive P-Channel 30 V (D-S) 175 째C MOSFET 文件:206.98 Kbytes 页数:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Automotive N-Channel 30 V (D-S) 175 째C MOSFET 文件:240.34 Kbytes 页数:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号:
SI4410DYTRPBF
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
SOP-8 |
39569 |
IR全新特价SI4410DYTRPBF即刻询购立享优惠#长期有货 |
询价 | ||
INFINEON/英飞凌 |
2025+ |
SO8 |
5000 |
原装进口,免费送样品! |
询价 | ||
IR |
17+ |
SOP |
6200 |
100%原装正品现货 |
询价 | ||
INFINEON |
25+ |
SOP-8 |
10000 |
原装正品!!!优势库存!0755-83210901 |
询价 | ||
Infineon Technologies |
23+ |
8-so |
6996 |
只做原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
20+ |
SO8 |
120000 |
原装正品 可含税交易 |
询价 | ||
IR |
2021+ |
SO-8 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
315 |
8 |
IR |
3 |
92 |
询价 | ||
IR |
08+ |
SOP8 |
3300 |
全新原装绝对自己公司现货特价! |
询价 |
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