SI4435DY

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V

SI4435DY-HF

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

SI4435DYPBF

SimpleDriveRequirements

SI4435DYPBF

HEXFETPowerMOSFET

VDSS=-30V RDS(on)=0.020Ω Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

SI4435DYTRPBF

UltraLowOn-Resistance

VDSS=-30V RDS(on)=0.020Ω Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

SI4435FDY

P-Channel30V(D-S)MOSFET

SM4435KC-TRL

P-Channel30-V(D-S)MOSFET

SPP4435

P-ChannelEnhancementModeMOSFET

SPP4435B

P-ChannelEnhancementModeMOSFET

SPP4435B

P-ChannelMOSFETusesadvancedtrenchtechnology