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FSS9230D

4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS9230R

4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

GFC9230

PChannelPowerMOSFET

GSGGunter Seniconductor GmbH.

Gunter Seniconductor GmbH.

IRF9230

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF9230

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

IRF9230

-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs

Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRF9230

TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A)

ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFE9230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

BVDSS-200V RDS(on)0.80Ω ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFE9230

P-CHANNELPOWERMOSFET

VDSS-200V ID(cont)-3.6A RDS(on)0.825Ω FEATURES •SURFACEMOUNT •SMALLFOOTPRINT •HERMETICALLYSEALED •DYNAMICdv/dtRATING •AVALANCHEENERGYRATING •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT

SEME-LAB

Seme LAB

IRFE9230

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFF9230

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9230

-4.0A,-200V,0.800Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRFF9230

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

200V,P-CHANNEL TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP9230

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

IRFY9230

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRH9230

TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.8ohm,Id=-6.5A)

200Volt,0.8Ω,RADHARDHEXFET InternationalRectifier’sP-ChannelRADHARDtechnologyHEXFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiationdosesashighas105Rads(Si).Underidenticalpre-andpost-radiationtestconditions,Internationa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRH9230

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHE9230

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    SFR9230TM

  • 制造商:

    Fairchild Semiconductor Corporation

供应商型号品牌批号封装库存备注价格
FSC
2020+
TO-252
1000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FAI
1816+
.
6523
科恒伟业!只做原装正品,假一赔十!
询价
FSC/ON
23+
原包装原封 □□
32500
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
N/A
2000
询价
FAIRCHI
2020+
TO-252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FAIRCHILD
22+
TO-252
28600
只做原装正品现货假一赔十一级代理
询价
FAIRCHILD
21+
TO-252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD
TO-252
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
FAIRCHILD
23+
TO-252
12300
全新原装真实库存含13点增值税票!
询价
FAIRCHIL
2023+
TO-252
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多SFR9230TM供应商 更新时间2024-6-14 13:57:00