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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
FSS9230D	文件：45.22 Kbytes Page：8 Pages	4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSS9230D1	文件：45.22 Kbytes Page：8 Pages	4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSS9230D3	文件：45.22 Kbytes Page：8 Pages	4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSS9230R	文件：45.22 Kbytes Page：8 Pages	4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
GFC9230	文件：117.76 Kbytes Page：1 Pages	PChannelPowerMOSFET	GSG Gunter Seniconductor GmbH.	GSG
IRF9230	文件：115.08 Kbytes Page：2 Pages	Avalanche-Energy-RatedP-ChannelPowerMOSFETs	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
IRF9230	文件：149.8 Kbytes Page：7 Pages	TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever	IRF International Rectifier	IRF
IRF9230	文件：72.62 Kbytes Page：7 Pages	-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor	Intersil Intersil Corporation	Intersil
IRF9230	文件：508.31 Kbytes Page：12 Pages	P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability	SamsungSamsung semiconductor 三星三星半导体	Samsung
IRF9230	文件：22.19 Kbytes Page：2 Pages	P-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB

详细参数

型号：
FSS9230D
制造商：
INTERSIL
制造商全称：
Intersil Corporation
功能描述：
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	FSS9572D	ZETEX	2016+	SOT23-5	6000	全新原装现货,量大价优,公司可售样!	询价
深圳市创新迹电子有限公司	FSSA100008RN000T	MU	23+		6800	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	FSSA100008RN000T	MU	23+		6800	专注配单,只做原装进口现货	询价
深圳市昊创电子有限公司	FSSA101005RNN00S	MURATA/村田	18+	SMD	288000	原装正品价格优势	询价

更多FSS9230D供应商更新时间2025-5-19 22:58:00

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