| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FSS923A0R | 7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | Intersil | |
7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | Intersil | ||
7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | Intersil | ||
7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | Intersil Intersil Corporation | Intersil |
详细参数
- 型号：
FSS923A0R
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZETEX |
2016+ |
SOT23-5 |
6000 |
全新原装现货,量大价优,公司可售样! |
询价 | ||
MU |
23+ |
6800 |
专注配单,只做原装进口现货 |
询价 | |||
MU |
23+ |
6800 |
专注配单,只做原装进口现货 |
询价 | |||
MURATA/村田 |
18+ |
SMD |
288000 |
原装正品价格优势 |
询价 |
相关规格书
更多- FU21W1P7-K120
- FU5F7711312
- FU7350W
- FU8007
- FX20ASJ-06
- FX20PCADP
- FX2-100P-0.635SH(71)
- FX2-100P-1.27DS
- FX2-100P-1.27DS(75)
- FX2-100P-1.27SV
- FX-311
- FX-311BP
- FX-311GP
- FX-311P
- FY7/8TF
- FY-912A
- FYAF3004DNTU
- FYB.0B.303.CLAD52
- FYB14015B
- M2V64S40DTP7
- M2VA80
- M2SA5802
- M2SA5803
- M2SA-5805
- M2SA-7010
- M3024
- M30245FCGP#U1
- M30260F3AGP#D5
- M30260F3AGP#U3A
- M30624FGAFP#D3
- M30624FGAFP#U3
- M30624FGAGP#D3
- M30624FGAGP#U3
- M30620PT-EPB
- M30620SPFP#U3C
- M30620SPGP#U3C
- M30622SAFP#D5
- M30622SPFP#D5C
- M30622SPFP#U5C
- M30624FGMFP#D5
- M30624FGMFP#U5
- M30624FGMGP#U5
- M30624FGNFP#D5
- M30800SAFP#U5
- M30800SAGP#D3
相关库存
更多- FU21W1S7-K121
- FU7350B
- FU7W2P7-K120
- FU8020
- FX20ASJ-06-T13
- FX2-100P-0.635SH
- FX2-100P-0.635SH(95)
- FX2-100P-1.27DS(71)
- FX2-100P-1.27DSL(71)
- FX30KMJ-3
- FX-311B
- FX-311G
- FX311P
- FX-3-14.022-S
- FY-712
- FYA3010DNTU
- FYAF3045DNTU
- FYB14015A
- FYB14015C
- M2VA63B
- M-2-SA
- M2SA-5802
- M2SA5805
- M2SA7010
- M2SA90A124ER
- M30245FCGP
- M3025
- M30260F3AGP#U3
- M30260F3AGP#U5
- M30624FGAFP#D5
- M30624FGAFP#U5
- M30624FGAGP#D5
- M30624FGAGP#U5
- M30620SAFP#U5
- M30620SPFP#U5C
- M30622SAFP
- M30622SAFP#U5
- M30622SPFP#U3C
- M30624FGMFP#D3
- M30624FGMFP#U3
- M30624FGMGP#U3
- M30624FGNFP#D3
- M30800SAFP#D3
- M30800SAFP-BL#U5
- M30800SAGP#U5
