SILICON NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min.

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ASI

RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS

DESCRIPTION: THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION. Features

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Microsemi

美高森美

RF & MICROWAVE TRANSISTORS VHP FM MOBILE APPLICATIONS

DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed primarily for VHP mobile communications. The chip of this transistor is mounted on a beryllia pill to isolate the collector lead and ground the emitter lead for high gain performance Features • 175MHz • 12.5 VOLTS • POUT =

文件：87.67 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ■ 450 - 512 MHz ■ 12.5 VOLTS ■ EFFICIENCY 55 ■ COMMON EMITTER ■ PO

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STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1134 is Designed for Class C UHF Communications FEATURES: • PG = 10 dB Typical at 470 MHz • Omnigold™ Metallization System

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ASI

RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It with stands very high VSWR under rated operating conditions. ■ 175 MHz ■ 7.5 VOLTS ■ COMMON EMITTER ■ POUT = 0.5 W MIN. WITH 7.0 dB GAIN

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STMICROELECTRONICS

意法半导体

VHP PORTABLE/MOBILE APPLICATIONS

DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It with stands very high VSWR under rated operating conditions. ■ 175 MHz ■ 7.5 VOLTS ■ COMMON EMITTER ■ POUT = 0.5 W MIN. WITH 7.0 dB GAIN

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ■ 470 MHz ■ 12.5 VOLTS ■ EFFICIENCY 60 ■ COMMON EMITTER ■ POUT = 5

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STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. ■ 150 MHz ■ 7.5 VOLTS ■ COMMON EMITTER ■ POUT = 2.5 W MIN. WITH 11.0 dB GAIN

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STMICROELECTRONICS

意法半导体

UHF POWER TRANSISTOR

DESCRIPTION SSM device type SD1136 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. FEATURES ● Designed for UHF military and commercial equipment ● 10.0 watts (min.) with greater than 6.0 dB gain ● Withstands infinite VSWR under operating condi

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STMICROELECTRONICS

意法半导体