N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

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N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

文件：66.57 Kbytes 页数：2 Pages

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N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1143 is 12.2 V Class C Transistor, designed for VHF mobile communications. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

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ASI

RF AND MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The SD1143 is a 12.2 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF Communications. It withstands very high VSWR under operating conditions. Features · 175 MHz · 12.5 Volts · Common Emitter · POUT = 10 W Min. · GP = 10 dB Gain

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ADPOW

RF & MICROWAVE TRANSISTORS

DESCRIPTION The SD1143 is a 12.2 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF Communications. It withstands very high VSWR under operating conditions. KEY FEATURES 175 MHz 12.5 Volts Common Emitter POUT = 10 W Min. GP = 10 dB Gain

文件：173.02 Kbytes 页数：4 Pages

Microsemi

美高森美

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The SD1143-01 is a 12.5 V epitaxial silicon, NPN transistor designed primarily for Class C, VHF communications equipment. Emitter ballast resistors provide high VSWR operating capability. Features · 175 MHz · 12.5 VOLTS · POUT = 10 W · GP = 10 dB MINIMUM · COMMO

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ADPOW

RF & MICROWAVE TRANSISTORS

DESCRIPTION The SD1144 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURE ◾ 470 MHz ◾ 12.5 Volts ◾ Common Emitter ◾ Collector Ef

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Microsemi

美高森美

RF & MICROWAVE TRANSISTORS

DESCRIPTION The SD1146 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURES • 470 MHz • 12.5 Volts • Efficiency 60 • Common E

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Microsemi

美高森美

RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The SD1146 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 470 MHz • 12.5 Volts • Efficiency 60 • Common Emit

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ADPOW