RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ■ 470 MHz ■ 12.5 VOLTS ■ EFFICIENCY 60 ■ COMMON EMITTER ■ POUT = 5

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STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. ■ 150 MHz ■ 7.5 VOLTS ■ COMMON EMITTER ■ POUT = 2.5 W MIN. WITH 11.0 dB GAIN

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STMICROELECTRONICS

意法半导体

Trans GP BJT NPN 16V 1.7A 4-Pin

NJS

新泽西半导体

650nm Index-Guided Red Laser Diode

Description The SLD1135VS is a index-guided red laser diode for Laser pointer. The wavelength is 20nm shorter than SLD1122VS. Features • Small astigmatism (7µm typ.) • Small package (φ5.6mm) • Single longitudinal mode • Low operating voltage (2.5V Max) • Max operating temperature = 40°C (Ca

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SONYSony Corporation

索尼

Hyperabrupt Junction Tuning Varactor

Description The SMV1135-011 is a surface mount varactor diode in the SOD-323 plastic package. It is designed for very high capacitance tuning ratio while having low series resistance, which makes this device especially attractive for wideband VCO applications. Features ■ High Tuning Ratio ■ Lo

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ALPHA

Single Window Single Mode Wideband Fiber Coupler

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OPLINK