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SCT20N170AG数据手册ST中文资料规格书
SCT20N170AG规格书详情
描述 Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
特性 Features
• AEC-Q101 rev. C qualified
• Very fast and robust intrinsic body diode
• Low capacitances
• Very high operating junction temperature capability (TJ = 200 °C)
技术参数
- 制造商编号
:SCT20N170AG
- 生产厂家
:ST
- Package
:HIP247
- Grade
:Automotive
- VDSS_nom(V)
:1700
- RDS(on)_max(mΩ)
:86
- Drain Current (Dc)_max(A)
:43
- PTOT_max(W)
:313
- Qg_typ(nC)
:101
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ROHM |
17+ |
TO220-3 |
300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Rohm(罗姆) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ROHM |
1726+ |
TO-220 |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
Xingge |
23+ |
DIP |
3300 |
原厂原装正品 |
询价 | ||
ROHM/罗姆 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ROHM |
SMDDIP |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Rohm |
25+ |
TO-TO-220AB |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ROHM Semiconductor |
23+ |
85 |
原装正品现货,德为本,正为先,通天下! |
询价 | |||
SCT2160KE |
150 |
150 |
询价 |