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SCT20N170AG中文资料Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package数据手册ST规格书
SCT20N170AG规格书详情
描述 Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
特性 Features
• AEC-Q101 rev. C qualified
• Very fast and robust intrinsic body diode
• Low capacitances
• Very high operating junction temperature capability (TJ = 200 °C)
技术参数
- 制造商编号
：SCT20N170AG
- 生产厂家
：ST
- Package
：HIP247
- Grade
：Automotive
- VDSS_nom(V)
：1700
- RDS(on)_max(mΩ)
：86
- Drain Current (Dc)_max(A)
：43
- PTOT_max(W)
：313
- Qg_typ(nC)
：101
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ROHM |
SMDDIP |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
SCT2160KE |
150 |
150 |
询价 | ||||
Xingge |
24+ |
DIP |
11000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
ROHM/罗姆 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
Rohm Semiconductor |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Rohm(罗姆) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ROHM |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ROHM/罗姆 |
2447 |
TO-220AB |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 |
