SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 64mΩ（TYP.）@VGS= 20V ·High Speed Switching with Low Capacitance ·Avalanche Ruggedness APPLICATIONS ·Motor Drives ·Solar Inverters, UPS ·Down Hole Drilling ·Battery Chargers

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ISC

无锡固电

Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia • AEC-Q101 rev. C qualified \n• Very fast and robust intrinsic body diode \n• Low capacitances \n• Very high operating junction temperature capability (TJ = 200 °C);

ST

意法半导体

N-Channel Enhancement Mode MOSFET

文件：1.19045 Mbytes 页数：4 Pages

MICROSS

N-Channel Enhancement Mode MOSFET

文件：601.4 Kbytes 页数：9 Pages

ICEMOS

Icemos Technology

N-Channel Enhancement Mode MOSFET

Features: ■ Low rDS(on) ■ Ultra Low Gate Charge ■ High dv/dt Capability ■ High Unclamped Inductive Switching (UIS) Capability ■ High Peak Current Capability ■ Increased Transconductance Performance ■ Optimized Design For High Performance Power Systems

文件：944.82 Kbytes 页数：4 Pages

MICROSS