Software-Compensated Clipped-Sine-Output TCXO

文件：762.46 Kbytes 页数：3 Pages

ACT

丝印：SCT1000N170；Package：HiP247；Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package

Features • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Auxiliary power supply for server • Switch mode power supply

文件：305.7 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Software-Compensated Clipped-Sine-Output TCXO

ACT

0.333V Split core current transformer

文件：7.68353 Mbytes 页数：1 Pages

YHDC

德昌电气设备

丝印：SCT100N120G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package

Features • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Traction for inverters • DC-DC converters • Solar inverters • OBC Descriptio

文件：217.31 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：SCT100N65G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package

Features • AEC-Q101 qualified • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Traction for inverters • DC-DC converters • OBC Description This silicon carbide Power MOSFET device has been de

文件：423.74 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia • AEC-Q101 rev. C qualified \n• Very fast and robust intrinsic body diode \n• Low capacitances \n• Very high operating junction temperature capability (TJ = 200 °C);

ST

意法半导体

电流传感器

SNIC

森尼克