SCT100

Software-Compensated Clipped-Sine-Output TCXO;

SCT100

Software-Compensated Clipped-Sine-Output TCXO

SCT1000N170

丝印：SCT1000N170；Package：HiP247；Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package

Features •Highspeedswitchingperformance •Veryfastandrobustintrinsicbodydiode •Lowcapacitances •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Auxiliarypowersupplyforserver •Switchmodepowersupply

SCT1000N170AG

Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package; • AEC-Q101 rev. C qualified \n• Very fast and robust intrinsic body diode \n• Low capacitances \n• Very high operating junction temperature capability (TJ = 200 °C);

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.\n\n

SCT100B

0.333V Split core current transformer