Schottky Power Rectifier Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

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安森美半导体

丝印：B1C；Package：SMB；Schottky Power Rectifier Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：168.37 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

1.0 A, 100 V, Schottky Power Rectifier, Surface Mount

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Small Compact Surface Mountable Package with J-Bend Leads\n• AEC-Q101 Qualified and PPAP Capable\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• High Blocking Voltage - 100 Volts\n• 150°C Operating Junction Temperature\n• Guardring for Stress Protec;

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安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 1A 1202-SMB2

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安森美半导体