20A TRENCH SUPER BARRIER RECTIFIER

Packaged in the robust industry standard TO220AB package, the SBRT20M60CT provides low VF and excellent reverse leakage stability at high temperatures. Reduced Low Forward Voltage Drop (VF). Better Efficiency and Cooler Operation\nReduced High Temperature Reverse Leakage\nIncreased Reliability Against Thermal Runaway Failure in High Temperature Operation;

Diodes

美台半导体

20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER

文件：209.25 Kbytes 页数：5 Pages

DIODES

美台半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SBR 60V 10A TO220AB

DIODES

美台半导体

SLLIMM - 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT

Features • IPM 25 A, 600 V, 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Under-voltage lockout of gate drivers • Smart shutdown function • Short-circuit protection • S

文件：550.7 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

SLLIMM - 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT

Features • IPM 25 A, 600 V 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Undervoltage lockout of gate drivers • Smart shutdown function • Short-circuit protection • Shu

文件：632.64 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

SLLIMM - 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT

Features • IPM 25 A, 600 V, 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Under-voltage lockout of gate drivers • Smart shutdown function • Short-circuit protection • S

文件：731.41 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体