Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：63.3 Kbytes 页数：4 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface MountSchottky Power Rectifier

文件：104.99 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface MountSchottky Power Rectifier

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SMB

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SMB

ONSEMI

安森美半导体