Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

文件：280.88 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

文件：151.82 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：DO-214AC，SMA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 1A 1202-SMB2

ONSEMI

安森美半导体

TO277

DIODES

美台半导体

上传：深圳市振宏微科技有限公司

SOT-523

RICHTEK立锜

上传：飞驰半导体（深圳）有限公司