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S40D30C

SCHOTTKY BARRIER RECTIFIERS(40A,30-60V)

Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes.

文件:258.39 Kbytes 页数:3 Pages

MOSPEC

统懋

S40D30C

40A DUAL SCHOTTKY BARRIER RECTIFIER

Features  Schottky Barrier Chip  Guard Ring for Transient Protection  Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Current Capability  Epoxy Meets UL 94V-0 Classification  Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件:56.33 Kbytes 页数:4 Pages

WTE

Won-Top Electronics

S40D30CE

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

文件:180.44 Kbytes 页数:2 Pages

MOSPEC

统懋

S40D35C

40A DUAL SCHOTTKY BARRIER RECTIFIER

Features  Schottky Barrier Chip  Guard Ring for Transient Protection  Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Current Capability  Epoxy Meets UL 94V-0 Classification  Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件:56.33 Kbytes 页数:4 Pages

WTE

Won-Top Electronics

S40D35CE

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

文件:180.44 Kbytes 页数:2 Pages

MOSPEC

统懋

S40D40

SCHOTTKY BARRIER RECTIFIERS(40A,30-60V)

Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes.

文件:258.39 Kbytes 页数:3 Pages

MOSPEC

统懋

S40D40C

40A DUAL SCHOTTKY BARRIER RECTIFIER

Features  Schottky Barrier Chip  Guard Ring for Transient Protection  Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Current Capability  Epoxy Meets UL 94V-0 Classification  Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件:56.33 Kbytes 页数:4 Pages

WTE

Won-Top Electronics

S40D40CE

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

文件:180.44 Kbytes 页数:2 Pages

MOSPEC

统懋

S40D45C

40A DUAL SCHOTTKY BARRIER RECTIFIER

Features  Schottky Barrier Chip  Guard Ring for Transient Protection  Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Current Capability  Epoxy Meets UL 94V-0 Classification  Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件:56.33 Kbytes 页数:4 Pages

WTE

Won-Top Electronics

S40D45CE

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

文件:180.44 Kbytes 页数:2 Pages

MOSPEC

统懋

产品属性

  • 产品编号:

    S40D

  • 制造商:

    GeneSiC Semiconductor

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    40A

  • 速度:

    标准恢复 >500ns,> 200mA(Io)

  • 安装类型:

    底座,接线柱安装

  • 封装/外壳:

    DO-203AB,DO-5,接线柱

  • 供应商器件封装:

    DO-5

  • 工作温度 - 结:

    -65°C ~ 190°C

  • 描述:

    DIODE GEN PURP 200V 40A DO5

供应商型号品牌批号封装库存备注价格
GeneSiC
1935+
N/A
55
加我qq或微信,了解更多详细信息,体验一站式购物
询价
GENESIC
25+
DO-5
326
就找我吧!--邀您体验愉快问购元件!
询价
GeneSiC
22+
NA
55
加我QQ或微信咨询更多详细信息,
询价
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
询价
GeneSiC Semiconductor
25+
DO-5
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
GeneSiC
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
24+
3000
自己现货
询价
MOSPEC
17+
TO-3P
6200
询价
MOSPEC
24+
TO3P
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
MOSPEC
23+
NA
8021
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
询价
更多S40D供应商 更新时间2025-12-1 10:20:00