Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

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MOSPEC

统懋

POWER MODULES DIODE

Description The B40J../B40C../B40D.. series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.

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IRF

Metal Hybrid Inductor

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SUMIDA

胜美达

SCHOTTKY BARRIER RECTIFIERS(40A,30-60V)

Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes.

文件：258.39 Kbytes 页数：3 Pages

MOSPEC

统懋