Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

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Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTSUsing the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or a

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Switchmode Dual Schottky Barrier Power Rectifiers

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Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

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VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：115.89 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司