Switchmode Dual Schottky Barrier Power Rectifiers

文件：152.61 Kbytes 页数：2 Pages

MOSPEC

统懋

Schottky Diode

Mospec

统懋

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：116.53 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：115.89 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世