| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
S40D | Silicon Standard Recovery Diode 文件:781.49 Kbytes 页数:3 Pages | GENESIC | GENESIC | |
S40D | Silicon Standard Recovery Diode 文件:585.34 Kbytes 页数:3 Pages | GENESIC | GENESIC | |
S40D | Silicon Standard Recovery Diode 文件:605.72 Kbytes 页数:3 Pages | GENESIC | GENESIC | |
Schottky Barrier Rectifiers Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and 文件:160.01 Kbytes 页数:2 Pages | MOSPEC 统懋 | MOSPEC | ||
Schottky Barrier Rectifiers Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and 文件:104.63 Kbytes 页数:2 Pages | MOSPEC 统懋 | MOSPEC | ||
40A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes 文件:56.33 Kbytes 页数:4 Pages | WTE Won-Top Electronics | WTE | ||
Schottky Barrier Rectifiers Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and 文件:160.34 Kbytes 页数:2 Pages | MOSPEC 统懋 | MOSPEC | ||
40A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes 文件:55.47 Kbytes 页数:4 Pages | WTE Won-Top Electronics | WTE | ||
40A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes 文件:55.47 Kbytes 页数:4 Pages | WTE Won-Top Electronics | WTE | ||
SCHOTTKY BARRIER RECTIFIERS(40A,30-60V) Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideallysuited for lowvoltage, high frequencyrectification, or as free wheeling and polarityprotection diodes. 文件:258.39 Kbytes 页数:3 Pages | MOSPEC 统懋 | MOSPEC |
产品属性
- 产品编号:
S40D
- 制造商:
GeneSiC Semiconductor
- 类别:
分立半导体产品 > 二极管 - 整流器 - 单
- 包装:
卷带(TR)
- 二极管类型:
标准
- 电流 - 平均整流 (Io):
40A
- 速度:
标准恢复 >500ns,> 200mA(Io)
- 安装类型:
底座,接线柱安装
- 封装/外壳:
DO-203AB,DO-5,接线柱
- 供应商器件封装:
DO-5
- 工作温度 - 结:
-65°C ~ 190°C
- 描述:
DIODE GEN PURP 200V 40A DO5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GeneSiC |
1935+ |
N/A |
55 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
GENESIC |
25+ |
DO-5 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
GeneSiC |
22+ |
NA |
55 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
GeneSiC Semiconductor |
25+ |
DO-5 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
GeneSiC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
询价 | ||
24+ |
3000 |
自己现货 |
询价 | ||||
MOSPEC |
17+ |
TO-3P |
6200 |
询价 | |||
MOSPEC |
24+ |
TO3P |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
MOSPEC |
23+ |
NA |
8021 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
询价 |
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