PBSS304PZ-Q

Marking：S304PZ；Package：SOT223；60 V, 4.5 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS304NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS305NZ

Marking：S305NZ；Package：SC-73；80 V, 5.1 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS305NZ-Q

Marking：S305NZ；Package：SC-73；80 V, 5.1 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS305PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS305PZ

Marking：S305PZ；Package：SC-73；80 V, 4.5 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS305PZ-Q

Marking：S305PZ；Package：SOT223；80 V, 4.5 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS305NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS306NZ

Marking：S306NZ；Package：SC-73；100 V, 5.1 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS306NZ-Q

Marking：S306NZ；Package：SOT223；100 V, 5.1 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS306PZ

Marking：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor

Featuresandbenefits Lowcollector-emittersaturation voltageVCEsat Highcollectorcurrentcapability ICandICM Highcollectorcurrentgain(hFE)at highIC Highefficiencyduetolessheat generation SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

PBSS306PZ-Q

Marking：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PDS3100Q-13

Marking：S3100；Package：POWERDI5；3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features GuardRingDieConstructionforTransientProtection LowPowerLoss,HighEfficiency LowReverseLeakageCurrent LowForwardVoltageDrop HighForwardSurgeCurrentCapability Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Qualifi