S2MF

Marking：S2MF；Package：SMAF；Surface Mount Silicon Rectifiers

Features ●Forsurfacemountedapplications ●Lowprofilepackage ●Lowforwardvoltagedrop ●Highsurgecurrentcapability ●RoHSCompliant

S2MHQ-13

Marking：S2MHQ；Package：SMB；1.5A SURFACE-MOUNT STANDARD RECTIFIER

Features •GlassPassivatedDieConstruction •Low-ForwardVoltageDropandHigh-CurrentCapability •SurgeOverloadRatingto50APeak •IdeallySuitedforAutomatedAssembly •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •TheS2MHQi

S-CSM260B

Marking：S26；Package：CSMB；Surface Mount Schottky Barrier Rectifiers Reverse Voltage 60V Forward Current 2.0A

1.FEATURES •Wedeclarethatthematerialofproductcomplieswith RoHSrequirementsandHalogenFree. •S-prefixforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualified andPPAPcapable. •PlasticpackagehasUnderwritersLaboratory

SCTHS250N65G3AG

Marking：S25N65G3PAG；Package：STPAK；Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Application •Maininverter(electrictraction) Description Thissiliconcarbide

SCTHS250N65G3TAG

Marking：S25N65G3PAG；Package：STPAK；Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Application •Maininverter(electrictraction) Description Thissiliconcarbide

SKY12208-478LF

Marking：S208；0.02 to 2.7 GHz 50 W High Power Silicon PIN Diode SPDT Switch

Applications Transmit/receiveandfail-safeswitchinginlandmobileradios, publicsafetyradios,andmilitarycommunicationsystems Features Highpowerhandling:50WCW,300Wpeak Lowinsertionloss:0.3dBtypical Controlledwithpositivepowersupply Highantennatoreceiv

SKY12209-478LF

Marking：S209；0.9 to 4.0 GHz 40 W High Power Silicon PIN Diode SPDT Switch

Applications Transmit/receiveswitchingandRFpathswitchingin TD-SCDMA,WiMAX,andLTEbasestations Transmit/receiveandRFpathswitchinginlandmobileradios andmilitarycommunicationsystems Features Highpowerhandling:40WCW Lowinsertionloss:0.3dBtypical High

SKY12211-478LF

Marking：S211；0.05 to 2.70 GHz 40 W High Power Silicon PIN Diode SPDT Switch

Applications Transmit/receiveswitchingandRFpathswitchinginTDSCDMA, WiMAX,andLTEbasestations Transmit/receiveandRFpathswitchinginlandmobileradios, publicsafetyradio,cableTV,andmilitarycommunication systems Features Highpowerhandling:40WCW Lowinserti

SM24

Marking：S24；Package：SOT-23；TRANSIENT VOLTAGE SUPPRESSOR

Features ·270Wpeakpulsepower(8/20us) ·Protectstwoun-directionallines ·Ultralowleakage:nAlevel ·Operatingvoltage:24V ·Lowclampingvoltage ·Complieswithfollowingstandards: Airdischarge:±30V Contactdischarge:±30kV ·RoHSCompliant Applications ·CellularH

SM24

Marking：S24；Package：SOT-23；2-Line Uni-directional TVS Diode Array

Features •300Wpeakpulsepower(8/20μs) •Protectstwouni-directionallines •Ultralowleakage:nAlevel •Operatingvoltage:24V •Lowclampingvoltage •Complieswithfollowingstandards:–IEC61000-4-2(ESD)immunitytestAirdischarge:±30kVContactdischarge:±30kV–IEC61000-4-5(Ligh