丝印：S2；Package：SOT-523；N-Channel MOSFET

Feature ⚫ 20V N-Channel MOSFET High Dense Design. ⚫ RDS(ON) =280m(typ.) @ VGS= 4.5V ⚫ RDS(ON) =360m(typ.) @ VGS= 2.5V ⚫ Reliable and Rugged ⚫ ESD Protected Applications ⚫ Portable Equipment and Battery Power Systems

文件：416.55 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

文件：21.35 Kbytes 页数：2 Pages

NTE

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

文件：164.21 Kbytes 页数：8 Pages

RFMD

威讯联合

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

文件：257.32 Kbytes 页数：12 Pages

PHI

PHI