TMUX8211RUMR

TMUX821x100-V,FlatRon,1:1(SPST),4-ChannelSwitcheswithLatch-UpImmunityand1.8-VLogic

1Features •Highsupplyvoltagecapable: –Dualsupply:±10Vto±50V –Singlesupply:10Vto100V –Asymmetricdualsupplyoperation •Consistentparametricacrosssupplyvoltages •Latch-upimmune •Highcontinuouscurrent:200mA •Lowcrosstalk:–110dB •Lowinputleakage:10pA

TPC8211

LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCApplications

TPC8211

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

TPCS8211

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=16mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=11S(typ.) •Lowleakagecurrent:IDSS=10μA(max

TPCS8211

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

UPC8211TK

BIPOLARANALOGINTEGRATEDCIRCUIT

DESCRIPTION TheμPC8211TKisasilicongermanium(SiGe)monolithicintegratedcircuitdesignedaslownoiseamplifierforGPSandmobilecommunications. Thepackageis6-pinlead-lessminimold,suitableforsurfacemount. ThisICismanufacturedusingour50GHzfmaxUHS2(UltraHighSpeedProc

UPC8211TK

NECsSiGeLOWNOISEAMPLIFIERFORGPS/MOBILECOMMUNICATIONS

UPC8211TK

SiGeLOWNOISEAMPLIFIERFORGPS/MOBILECOMMUNICATIONS

UZ8211

POWERZENERS

DESCRIPTION Onewattzenerdiodes,hermeticallysealedinglass. FEATURES •HighSurgeRatings •AQuartertheSizeofConventional1WattZeners •ImpervioustoMoisture

UZ8211

POWERZENERS

UZ8706,UZ8806SERIES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.