RTM

M18 Ultra short tubular type Photo sensor

RTM002P02

Marking：TW；Package：VMT3；2.5V Drive Pch MOS FET

Structure SiliconP-channelMOSFET Features 1)LowOn-resistance. 2)Smallpackage(VMT3). 3)2.5Vdrive.

RTM002P02

2.5V Drive Pch MOS FET

Structure SiliconP-channelMOSFET Features 1)LowOn-resistance. 2)Smallpackage(VMT3). 3)2.5Vdrive.

RTM002P02T2L

2.5V Drive Pch MOS FET

Structure SiliconP-channelMOSFET Features 1)LowOn-resistance. 2)Smallpackage(VMT3). 3)2.5Vdrive.

RTM010S

Widest range of geometrics and sizes Covers all standard applications.

Benefits Widestrangeofgeometricsandsizes Coversallstandardapplications.One toolmeetsalloperationalneeds. ActivetiptechnologyFastestheat-up andrecoverytime,sensorclosetothe soldertip,excellentheattransfer.No downtime,continuingworkflow, excellentresults Digit

RTM2301CX

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

RTM2302

20V N-Channel Enhancement Mode MOSFET

Features ◇Advancedtrenchprocesstechnology ◇Highdensitycelldesignforultralowon-resistance ◇Excellentthermalandelectricalcapabilities ◇CompactandlowprofileSOT-23package

RTM2302CX

20V N-Channel Enhancement Mode MOSFET

Features ◇Advancedtrenchprocesstechnology ◇Highdensitycelldesignforultralowon-resistance ◇Excellentthermalandelectricalcapabilities ◇CompactandlowprofileSOT-23package

RTMBF305

FAST RECOVERY SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

HighSurgeCurrentCapability GlassPassivatedDieConstruction DesignedforSurfaceMountApplication Features LowForwardVoltageDrop HighCurrentCapability PlasticMaterial–ULFlammability94V-O

RTMBF31

FAST RECOVERY SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

HighSurgeCurrentCapability GlassPassivatedDieConstruction DesignedforSurfaceMountApplication Features LowForwardVoltageDrop HighCurrentCapability PlasticMaterial–ULFlammability94V-O