丝印：TMUX8211；Package：WQFN；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

文件：2.08676 Mbytes 页数：42 Pages

TI

德州仪器

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

文件：171.6 Kbytes 页数：4 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

文件：276.91 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 μA (max

文件：224.71 Kbytes 页数：7 Pages

TOSHIBA

东芝