首页 >RTC6503>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
USBLow-SpeedInterface | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
RFAMPLIFIER | SPECTRUM Spectrum Instrumentation GmbH | SPECTRUM | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
TransistorSiliconNPNEpitaxialType | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=30nC(typ.) (3)Smalloutputcharge:Qoss=81.3nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.41mΩ(typ.)(VGS=10V) (5)Lowleak | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs Description TheTSHA650.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Incontras | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelandP-ChannelSiliconMOSFETs Features ■LowOn-resistance. ■CompositetypewithanN-channelMOSFETandaP-channelMOSFETdrivingfroma4.5V/-4.5Vsupplyvoltagecontainedinasinglepackage. ■High-densitymounting. ■RoHScompliant. Applications ■General-PurposeSwitchingDevice ■Formotordrive | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | Winsemi | ||
CLCapacitor-Less500mALowPowerConsumptionHighSpeedLDORegulator | TOREXTorex Semiconductor 特瑞仕特瑞仕半导体株式会社 | TOREX |
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