丝印：TPHR6503PL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ.) (VGS = 10 V) (5) Low leak

文件：604.55 Kbytes 页数：10 Pages

TOSHIBA

东芝

Silicon N-channel MOS (U-MOS-H)

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ.) (VGS = 10 V) (5) Lo

文件：593.17 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 393 A \nPower Dissipation PD 170 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

东芝

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. In contras

文件：114.26 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N- Channel and P-Channel Silicon MOSFETs

Features ■ Low On-resistance. ■ Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package. ■ High-density mounting. ■ RoHS compliant. Applications ■ General-Purpose Switching Device ■ For motor drive

文件：428.41 Kbytes 页数：9 Pages

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

CL Capacitor-Less 500mA Low Power Consumption High Speed LDO Regulator

文件：812.23 Kbytes 页数：26 Pages

TOREX

特瑞仕