丝印：H2C；Package：VS-8；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Transistor Silicon NPN Epitaxial Type

文件：197.04 Kbytes 页数：5 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：DC/DC converters / Camera flashes / High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Collector Current IC 1.5 A \nCollector Current ICP 2.5 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.6 W \nCollector-emitter voltage VCEO 20 V ;

Toshiba

东芝

Package：SOT-23-6 细型，TSOT-23-6；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 1.5A VS-6

Toshiba Semiconductor and Storage