TPC8001

Silicon N Channel MOS Type (MOSVI)

TPCC8001-H

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCF8001

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=19mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=8S(typ.) •Lowleakagecurrent:IDSS=10μA(max.)(VDS=30V) •Enhancementmode:Vth=1.3to2.5V

TPCM8001-H

TOSHIBAFieldEffectTransistorSiliconN-ChannelMOSType(Ultra-High-SpeedU-MOSIII)

TPCM8001-H

HighSpeedandHighEfficiencyDC-DCConverters,NotebookPCApplications,PortableEquipmentApplications

High-EfficiencyDC／DCConverterApplications NotebookPCApplications Portable-EquipmentApplications •Smallfootprintduetoasmallandthinpackage •High-speedswitching •Smallgatecharge:QSW=6.0nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=7mΩ(typ.) •Highforwardtr

TPCP8001-H

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(UltraHighspeedU-MOSIII)

HighEfficiencyDC／DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=3.6nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=13mΩ(typ.) •Highforwardt

TR8001

868.35MHzHybridTransceiver

TR8001

868.35MHzHybridTransceiver

U8001A

SingleOutputDCPowerSupplies

UP8001A

Li-ion/LiPolymerBatteryCharger