TN6503

RF AMPLIFIER MODEL

TPC6503

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPC6503

TransistorSiliconNPNEpitaxialType

TPHR6503PL

MOSFETsSiliconN-channelMOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=30nC(typ.) (3)Smalloutputcharge:Qoss=81.3nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=0.41mΩ(typ.)(VGS=10V) (5)Lowleak

TSHA6503

InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs

Description TheTSHA650.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Incontras

WFSA6503

N-ChannelandP-ChannelSiliconMOSFETs

Features ■LowOn-resistance. ■CompositetypewithanN-channelMOSFETandaP-channelMOSFETdrivingfroma4.5V/-4.5Vsupplyvoltagecontainedinasinglepackage. ■High-densitymounting. ■RoHScompliant. Applications ■General-PurposeSwitchingDevice ■Formotordrive

XC6503

CLCapacitor-Less500mALowPowerConsumptionHighSpeedLDORegulator