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FDB6030	文件：473.58 Kbytes Page：4 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDB6030BL	文件：401.43 Kbytes Page：10 Pages	N-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDB6030BL	文件：328.74 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDB6030L	文件：329.15 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=48A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDB6030L	文件：473.58 Kbytes Page：4 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6030	文件：169.53 Kbytes Page：6 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6030	文件：107.97 Kbytes Page：5 Pages	N-ChannelPowerTrenchTMMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6030BL	文件：107.97 Kbytes Page：5 Pages	N-ChannelPowerTrenchTMMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6030BL	文件：74.47 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6030BL	文件：352.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDD6030L	文件：352.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDD6030L	文件：169.53 Kbytes Page：6 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6030L	文件：118.78 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP6030	文件：401.43 Kbytes Page：10 Pages	N-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP6030BL	文件：401.43 Kbytes Page：10 Pages	N-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP6030BL	文件：333.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDP6030L	文件：332.57 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDP6030L	文件：473.58 Kbytes Page：4 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDU6030BL	文件：74.47 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
GPR-6030D	文件：167.46 Kbytes Page：1 Pages	180WATTLINEAR	POWERBOX Powerbox manufactures	POWERBOX

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	RT6030GS	RICHTEK/立锜	23+	SOP-8	25467	买RT找智联18年专营RT值得信赖	询价
深圳市科恒伟业电子有限公司	RT6030GS	RICHTEK	1815+	SOP16	6528	只做原装正品现货!或订货,假一赔十!	询价
深圳市华斯顿科技有限公司	RT6030GS	RICHTEK	22+23+	SOP-16	32149	绝对原装正品全新进口深圳现货	询价
深圳市盈宏半导体科技有限公司	RT6030GS	RICHTEK	13+	SOP16	23	刚到现货加微13425146986	询价
深圳市华睿芯科技有限公司	RT6030GS	RICHTEK	23+	SOP-16	20000	原厂原装正品现货	询价
深圳市纳艾斯科技有限公司	RT6030GS	RICHTEK	2020+	SOP16	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市粤骏腾电子科技有限公司	RT6030GS	RICHTEK/立锜	23+	SOP-8	14788	原装正品现货供应	询价
深圳市维尔达电子有限公司	RT6030GS	RICHTEK	2023+	SOP-16	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	RT6030GS	立锜	20+	SOP-8	65300	一级代理/放心购买!	询价
深圳市艾宇特电子科技有限公司	RT6030GS	RICHTEK/立锜	20+	SOP16	9850	只做原装正品假一赔十为客户做到零风险!!	询价

更多RT6030GS供应商更新时间2024-6-12 13:59:00

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