FDB6030L中文资料仙童半导体数据手册PDF规格书
FDB6030L规格书详情
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
特性 Features
■ 52 A, 30 V. RDS(ON) = 0.0135 W @ VGS=10 V
RDS(ON) = 0.020 W @ VGS=4.5 V.
■ Improved replacement for NDP6030L/NDB6030L.
■ Low gate charge (typical 34 nC).
■ Low Crss (typical 175 pF).
■ Fast switching speed.
产品属性
- 型号：
FDB6030L
- 功能描述：
MOSFET N-Channel PowerTrench
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-263 |
5000 |
询价 | ||||
FAIRCHILD/仙童 |
22+ |
TO-263 |
18000 |
原装正品 |
询价 | ||
FAIRCHILD |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAI |
22+ |
TO252 |
1000 |
全新原装现货!自家库存! |
询价 | ||
FSC |
23+ |
TO-263 |
65480 |
询价 | |||
FAIRCILD |
22+ |
TO263-2 |
8000 |
原装正品支持实单 |
询价 | ||
FSC |
0151/ |
TO263 |
44 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
2000 |
TO263 |
300 |
原装现货海量库存欢迎咨询 |
询价 | ||
FAIRCHILD/仙童 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
询价 |
