SiC SBD

RSS10065S 是瑞森采用先进的碳化硅SBD技术制造的SiC 肖特基二极管，该产品拥有较强的抗浪涌冲击能力，优良的温度特性和开关特性。能提升方案性能效率，缩少空间减轻重量和零件数量，及增强系统可靠性。 IF(TC≤135℃)=14.5A \nVF(Typ)=1.4V\n175°C工作结温\n抗浪涌能力强\n良好的开关特性;

REASUNOS

瑞森半导体

650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

文件：395.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 V, 10 A low VF power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component

文件：395.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

650 V, 10 A power Schottky silicon carbide diode

Features • Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Very low drop forward voltage • Power efficient product • ECOPACK2 compliant component Description This 10

文件：379.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体