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14N05

FastSwitching

FEATURES •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=50V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max) •FastSwitching APPLICATIONS •Switchregulators •Switchingconvertersmotordriversandrelaydrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

14N05

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

14N05L

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD14N05

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

RFD14N05L

60VN-ChannelMOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

UMWUMW

友台友台半导体

RFD14N05LSM

60VN-ChannelMOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve •175℃OperatingTemperature VDS(V)=60V ••RDS(ON)

UMWUMW

友台友台半导体

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05LSM

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=14A@TC=25℃ DrainSourceVoltage-VDSS=50V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD14N05LSM

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD14N05SM

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
TO-220
89630
当天发货全新原装现货
询价
SAMSUNG/三星
2200603X422R
100000
全新原装现货 样品可售
询价
MURATA/村田
2022+
0805
1000000
原厂代理 终端免费提供样品
询价
Schneider Electric
23+
原厂封装
436
深圳现货库存/下单即发/原装正品
询价
施耐德
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Schneider Electric
15193+
con
25
现货常备产品原装可到京北通宇商城查价格
询价
WOOYOUNG
2020+
其他电子元
7089
全新原装现货库存,超低价清仓!
询价
WOOYOUNG
2023+环保现货
原厂封装
5050
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
RENESAS
2017+
QFN
45255
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
RENESAS
2016+
QFN
5500
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多RPF14N05L供应商 更新时间2024-5-23 15:40:00