Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：260.97 Kbytes 页数：6 Pages

TOSHIBA

东芝

OBUDOWA CE 71

文件：172.6 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

文件：68.74 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

文件：68.74 Kbytes 页数：8 Pages

NEC

瑞萨