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UPA1970

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

文件:68.74 Kbytes 页数:8 Pages

NEC

瑞萨

UPA1970

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V d

文件:203.33 Kbytes 页数:10 Pages

RENESAS

瑞萨

UPA1970

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

瑞萨

UPA1970TE

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件:522.01 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

UPA1970TE

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V driv

文件:68.74 Kbytes 页数:8 Pages

NEC

瑞萨

UPA1970TE

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA1970 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V d

文件:203.33 Kbytes 页数:10 Pages

RENESAS

瑞萨

UPA1970TE

Nch Dual Power Mosfet 20V 2.2A 69Mohm 6Pin Tmm/Sc-95

The UPA1970TE is a Nch Dual Power Mosfet 20V 2.2A 69Mohm 6Pin Tmm/Sc-95. • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A) RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日UPA1970 Data Sheet (G15;

Renesas

瑞萨

详细参数

  • 型号:

    UPA1970

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

供应商型号品牌批号封装库存备注价格
NEC
24+
5000
有部份现货
询价
RENESAS
2016+
SOT23-6
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
原厂正品
23+
SOT23-6
5000
原装正品,假一罚十
询价
NEC
24+
SC-95
5000
只做原装公司现货
询价
NEC
25+23+
SOT23-6
68206
绝对原装正品现货,全新深圳原装进口现货
询价
Renesas
19+
TSOP-6
200000
询价
RENESAS/瑞萨
24+
SOT23-6
9600
原装现货,优势供应,支持实单!
询价
RENESAS/瑞萨
23+
SOT163
50000
全新原装正品现货,支持订货
询价
NEC
24+
SOT163
23400
原装现货假一赔十
询价
NEC
23+
SOT-163
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
更多UPA1970供应商 更新时间2026-4-19 10:20:00