IIPD65R650CE

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPA65R650CE

650VCoolMOS??CEPowerTransistor

IPA65R650CE

MetalOxideSemiconductorFieldEffectTransistor

IPA65R650CE

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages,hardswitchingPWMstagesandresonants

IPAN65R650CE

650VCoolMOSCEPowerTransistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

IPD65R650CE

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPD65R650CE

650VCoolMOS??CEPowerTransistor

IPD65R650CE

MetalOxideSemiconductorFieldEffectTransistor

IPS65R650CE

650VCoolMOS짧CEPowerTransistor