丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.65Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

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isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages, hard switching PWM stages and resonant s

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