丝印：K72；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

General Features VDS =50V,ID =0.35A RDS(ON) 2KV

文件：587.28 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：72；Package：DFN1006；N-Channel Trench MOSFET

General Features VDS = 60V,ID = 0.35A RDS(ON)

文件：414.37 Kbytes 页数：6 Pages

RECTRON

丽正国际

Process transmitter with control unit

Your benefits • 5-digit, 7-segment backlit LC display • User-configurable dot matrix display range for bar graph, units and tag name • 1 or 2 universal inputs • 2 relays (optional) • Min./max. value saved • 1 or 2 calculated values • One linearization table with 32 points for each calculate

文件：1.0146 Mbytes 页数：16 Pages

EH

恩德斯

丝印：AMMOPAK；Package：TO-92；N-Channel MOSFET 600V, 0.4 A, 8.5Q

Features Vds = 600V id=04A @Vgs=10V Rds(on)

文件：310.41 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：1606；Package：DFN1006-3；N-Channel Trench MOSFET

General Features VDS = 20V,ID = 0.7A RDS(ON)

文件：405.06 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：1605；Package：DFN1006-3；P-Channel Trench MOSFET

General Features VDS = -20V,ID = -0.7A RDS(ON)

文件：408.77 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：0101；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =0.87A RDS(ON)

文件：677.99 Kbytes 页数：7 Pages

RECTRON

丽正国际

00 - NIM-CAMAC

文件：66.18 Kbytes 页数：3 Pages

LEMO

雷莫

E - Outdoor Stepped Insert

文件：62.04 Kbytes 页数：3 Pages

LEMO

雷莫

E - Outdoor Stepped Insert

文件：62.03 Kbytes 页数：3 Pages

LEMO

雷莫