SDB2301

Highspeedswitching

SDB2301F

SchottkyBarrierDiode

Features •LowVF:Max.0.45V@IF=1A •Forswitchingpowersupply

SE2301

SOT-23Plastic-EncapsulateMOSFETS

SGM2301

P-ChannelEnhancementModePowerMos.FET

SI2301

P-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •-20V,-2.8A,RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •HighSpeedSwitching •SOT-23Package •MarkingCode:S1 •Epox

SI2301

P-ChannelEnhancementModeFieldEffectTransistor

SI2301

Plastic-EncapsulateMosfets

Plastic-EncapsulateMosfets FEATURES •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •CaseMaterial:MoldedPlastic.

SI2301

HighdensecelldesignforextremelylowRDS(ON)

Plastic-EncapsulateMosfets FEATURES •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •CaseMaterial:MoldedPlastic.

SI2301

P-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions P-CHANNELMOSFETinaSOT-23PlasticPackage. Features TrenchFETPowerMOSFET100RgTested. Applications Primarilythedisplayscreendriveapplications.

SI2301

P-ChannelEnhancementModeMOSFET

Feature ●-20V/-3A,RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON) ●ReliableandRugged ●SOT-23forSurfaceMountPackage Applications ●PowerManagement PortableEquipmentandBattery