丝印：S1；Package：SOT-23；P-Channel Enhancement Mode Mosfet

Features TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter.

文件：351.83 Kbytes 页数：5 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

P-Channel Enhancement Mode Power MOSFET

General Features VDS = -20V,ID =-2.6A RDS(ON)

文件：272.13 Kbytes 页数：7 Pages

RECTRON

丽正国际

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1301~1306

文件：261.5 Kbytes 页数：7 Pages

TOSHIBA

东芝

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：465.56 Kbytes 页数：9 Pages

VBSEMI

微碧半导体