Schottky Barrier Diode

Features • Low VF : Max. 0.45V @ IF=1A • For switching power supply

文件：37.19 Kbytes 页数：3 Pages

AUK

Schottky Barrier Diode

Kodenshi-AUK

SOT-23 Plastic-Encapsulate MOSFETS

文件：434.57 Kbytes 页数：4 Pages

WILLAS

威伦电子

P-Channel Enhancement Mode Power Mos.FET

文件：349.17 Kbytes 页数：4 Pages

SECOS

喜可士

P-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • High Speed Switching • SOT-23 Package • Marking Code: S1 • Epox

文件：242.42 Kbytes 页数：5 Pages

MCC