丝印：1A5N30；Package：SOT-323；N-Channel 30 V (D-S) MOSFET

General Features VDS =30V,ID =1.5A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation RDS(ON)

文件：430.88 Kbytes 页数：8 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

N-Channel 30 V (D-S) MOSFET

General Features VDS =30V,ID =1.5A RDS(ON)

文件：166.26 Kbytes 页数：8 Pages

RECTRON

丽正国际

MITSUBISH
模块

MITSUBISH

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AIRBORN
N/A

AIRBORN

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