R. F. Molded Chokes

[Ohmite Mfg. Co.]

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丝印：FN100A；Package：DFN5X6-8L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =150A RDS(ON)

文件：422.21 Kbytes 页数：7 Pages

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丽正国际

丝印：150N100；Package：TO-263-2L；N-Channel Super Trench Power MOSFET

Description The RM150N100AHD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：498.23 Kbytes 页数：7 Pages

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丽正国际

丝印：150N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

文件：380.57 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：150N100；Package：TO-263-2L；N-Channel Super Trench Power MOSFET

Description The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：276.21 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：150N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description The RM150N100T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：242.2 Kbytes 页数：9 Pages

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丽正国际

丝印：150N150；Package：TO-263-2L；N-Channel Super Trench Power MOSFET

General Features VDS =150V,ID =150A RDS(ON)

文件：362.85 Kbytes 页数：9 Pages

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丽正国际

丝印：150N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM150N30ALD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

文件：650.33 Kbytes 页数：8 Pages

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丽正国际

丝印：150N30；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM150N30LT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

文件：304.77 Kbytes 页数：8 Pages

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丽正国际

丝印：FN40；Package：DFN5X6-8L；N-Channel Super Trench Power MOSFET

Description The RM150N40DFV uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：2.29201 Mbytes 页数：7 Pages

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丽正国际