丝印：150N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM150N30ALD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

文件：650.33 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：150N30；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM150N30LT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

文件：304.77 Kbytes 页数：8 Pages

RECTRON

丽正国际