丝印：150N60；Package：DFN5X6-8L；N-Channel Super Trench Power MOSFET

General Features Vps =60V,Ip =150A Ros con €2.3mQ @Ves=10V (TYP:1.9mQ) Ros con €3.5m Q @Ves=4.5V (TYP:3.0mQ) Excellent gate charge x Ros(on) product Very low on-resistance Ros(on) 150 °C operating temperature Pb-free lead plating 100 UIS tested

文件：1.74366 Mbytes 页数：7 Pages

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丝印：150N60；Package：DFN5X6-8L；N-Channel Super Trench Power MOSFET

General Features Vds 6011 =150A Rds (on)

文件：2.03078 Mbytes 页数：7 Pages

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丝印：150N60；Package：TO-263-2L；N-Channel Enhancement Mode Power MOSFET

文件：233.35 Kbytes 页数：7 Pages

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丝印：150N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：228.39 Kbytes 页数：7 Pages

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